IRFR220TRLPBF【PDF 1/11 页】MOSFET N-CH 200V 4.8A DPAK

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Sheet目录446

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IRFR220, IRFU220, SiHFR220, SiHFU220

www.vishay.com

PRODUCT SUMMARY

Power MOSFET

FEATURES

? Dynamic dV/dt rating

Vishay Siliconix

V DS (V)

200

Repetitive avalanche rated

Fast switching

R DS(on) ( Ω )

Q g (Max.) (nC)

Q gs (nC)

Q gd (nC)

Configuration

V GS = 10 V

3.0

7.9

Single

0.80

Surface mount (IRFR220, SiHFR220)

Straight lead (IRFU220, SiHFU220)

Available in tape and reel

Available

Ease of paralleling

Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

D S

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

ORDERING INFORMATION

N-Channel MOSFET

are possible in typical surcace mount applications.

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

DPAK (TO-252)

SiHFR220-GE3

IRFR220PbF

SiHFR220-E3

DPAK (TO-252)

SiHFR220TRL-GE3

IRFR220TRLPbF a

SiHFR220TL-E3 a

DPAK (TO-252)

IRFR220TRPbF a

SiHFR220T-E3 a

DPAK (TO-252)

IRFR220TRRPbF a

SiHFR220TR-E3 a

IPAK (TO-251)

SiHFU220-GE3

IRFU220PbF

SiHFU220-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

V DS

V GS

LIMIT

200

± 20

UNIT

Continuous Drain Current

V GS at 10 V

T C = 25 °C

T C = 100 °C

I D

4.8

3.0

Pulsed Drain Current a

I DM

Linear Derating Factor

Linear Derating Factor (PCB Mount) e

0.33

0.020

W/°C

Single Pulse Avalanche Energy b

Repetitive Avalanche Current a

Repetitive Avalanche Energy a

E AS

I AR

E AR

161

4.8

4.2

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount) e

T C = 25 °C

T A = 25 °C

P D

2.5

Peak Diode Recovery

dV/dt c

dV/dt

5.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature) d

for 10 s

T J , T stg

-55 to +150

260

°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V DD = 50 V, starting T J = 25 °C, L = 14 mH, R g = 25 Ω , I AS = 4.8 A (see fig. 12).

c. I SD ≤ 5.2 A, dI/dt ≤ 95 A/μs, V DD ≤ V DS , T J ≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S14-0555-Rev. E, 07-Apr-14

Document Number: 91270

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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